HMC413QS16GE amplifier equivalent, gaas ingap hbt mmic power amplifier.
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Included in the HMC-DK002 Designer’s Kit
Genera.
This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications:
* Cellular / PCS / 3G
The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an expose.
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